1 to-220f item symbol ratings unit remarks drain-source voltage v ds 450 v dsx 450 continuous drain current i d 4.3 pulsed drain current i d(puls] 17.2 gate-source voltage v gs 30 repetitive or non-repetitive i ar 4.3 non-repetitive maximum avalanche e nergy e as 211 repetitive maximum avalanche energy 2.1 maximum drain-s ource dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 2.16 21 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3917-01MR fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =450v v gs =0v v ds =360v v gs =0v v gs =30v i d =2.1a v gs =10v i d =2.1a v ds =25v v cc =300v i d =2.1a v gs =10v r gs =10 ? v v a ma na ? s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 5.952 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =225v i d =4.3a v gs =10v i f =4.3a v gs =0v t ch =25c i f =4.3a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj mj kv/s kv/s w w c c kvrms 450 3.0 5.0 25 2.0 100 1.30 1.60 1.8 3.5 330 500 50 75 24 11 17.5 5.5 8.5 23 34.5 5.0 8.0 13.0 20 6.0 9.0 2.5 3.8 1.00 1.50 280 1.6 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series 200509 = < v gs =-30v note *1 note *2 note *3 vds 450v note *4 ta=25 c tc=25 c t=60sec, f=60hz = < = < note *1 tch 150c note *2 starting tch=25c, i as =1.8a, l=119mh, v cc =45v, r g =50 ? e as limited by maximum channel temperrature and avalanche current. see to ?avalanche energy? graph. note *3 repetitve rating : pulse width limited by maximum channel temperature. see to ?transient thermal impedance? graph. note *4 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < =
2 characteristics 2SK3917-01MR fuji power mosfet 0 25 50 75 100 125 150 0 5 10 15 20 25 30 allowable power dissipation pd=f(tc) pd [w] tc [ q c] 0 2 4 6 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 8 9 7.0v 20v 10v 8.0v 6.5v 6.0v id [a] vds [v] typical output characteristics id=f(vds):80 p s pulse test,tch=25 q c vgs=5.5v 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.01 0.1 1 10 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 p s pulse test,vds=25v,tch=25 q c 0.01 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 p s pulse test,vds=25v,tch=25 q c 0246810 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 8v rds(on) [ : ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 p s pulse test,tch=25 q c 10v 20v 6.0v 6.5v 7.0v vgs= 5.5v -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 rds(on) [ : ] tch [ q c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=2.1a,vgs=10v
3 2SK3917-01MR fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250ua vgs(th) [v] tch [ q c] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 qg [nc] typical gate charge characteristics vgs=f(qg):id=4.3a,tch=25 q c vgs [v] 360v 225v vcc= 90v 10 -1 10 0 10 1 10 2 10 3 100f 1p 10p 100p 1n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 p s pulse test,tch=25 q c 10 -1 10 0 10 1 10 0 10 1 10 2 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 : td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 i as =1.8a i as =4.3a i as =2.6a e as [mj] starting tch [ q c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=45v
4 2SK3917-01MR fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 q c,vcc=45v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 10 2 transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ o c/w] t [sec]
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